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Si2312BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.3
0.2
8
7
0.1
0.0
- 0.1
- 0.2
- 0.3
- 0.4
I D = 250 μA
6
5
4
3
2
1
T A = 25 °C
- 0.5
- 50
- 25
0
25 50 75 100
125
150
0
0.01
0.1
1
10
100
600
T J - Temperature (°C)
Threshold Voltage
100
10
1
0.1
Limited
by R DS(on) *
T A = 25 °C
Single Pulse
10 μs
100 μs
1 ms
10 ms
100 ms
1s
10 s
100 s, DC
Time (s)
Single Pulse Power
0.01
Only valid when V GS = or > 1.8 V
0.1 1 10 100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum V GS at which R DS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
t 2
0.1
0.1
0.05
0.02
Single Pulse
P DM
t 1
t 1
1. Duty Cycle, D =
t 2
2. Per Unit Base = R thJA = 166 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73235 .
www.vishay.com
4
Document Number: 73235
S10-0791-Rev. D, 05-Apr-10
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